▎ 摘　　要

NOVELTY - The method involves obtaining (S11) a substrate with a graphene layer. The graphene layer is located on the substrate. A source electrode and a drain electrode are prepared (S12) on the graphene layer. A first carrier layer and a top cover layer are sequentially formed (S13) on the substrate. The through holes corresponding to the graphene layer provided in the first bearing layer and the graphene layer. The top cover layer forms a bearing cavity. The carrying cavity is sealed to obtain a graphene field effect tube after determining that the liquid hydrogen ion electrolyte is injected into the carrying cavity. The gate electrode of the graphene field effect tube is in contact with the liquid hydrogen ion electrolyte. USE - Manufacturing method for graphene field effect tube. ADVANTAGE - The graphene field effect tube is controlled in situ, and the manufacturing process is simple, cost is low, and the application range is wide. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene field effect tube. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for manufacturing a graphene field effect transistor. (Drawing includes non-English language text) Step for obtaining substrate with graphene layer (S11) Step for preparing source electrode and drain electrode (S12) Step for sequentially forming first carrier layer and top cover layer (S13)