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  • 专利标题:   Manufacture of patterned graphene electrode used for manufacturing organic field effect transistor, involves patterning metal film deposited on substrate, and depositing graphene on patterned film by chemical vapor deposition.
  • 专利号:   CN101442105-A, CN101442105-B
  • 发明人:   DI Z, GUO Y, LIU Y, WEI D, YU G, ZHU D
  • 专利权人:   CHINESE ACAD SCI CHEM INST, CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   CN101442105-A 27 May 2009 H01L-051/40 200946 Pages: 11 Chinese
  • 申请详细信息:   CN101442105-A CN10177814 21 Nov 2007
  • 优先权号:   CN10177814

▎ 摘　　要

NOVELTY - A metal film is deposited on a substrate and patterned. The substrate is used in a chemical vapor deposition apparatus and graphene is deposited on the patterned film by chemical vapor deposition to form patterned graphene electrode. USE - Manufacture of patterned graphene electrode used for manufacturing organic field effect transistor (both claimed).