▎ 摘　　要

NOVELTY - The device has a control gate overlapped with a central line, a top gate insulating layer and a top gate from bottom to top, where size of a bottom gate is same as size of the top gate and size of a channel layer is greater than size of the bottom gate and the top gate. A source electrode and a drain electrode are arranged on a top surface of the channel layer and respectively set at left and right sides of the top gate. The channel layer is made of two-dimensional semiconductor material. The top gate insulating layer and the bottom gate insulating layer are made of two-dimensional gate dielectric material. The two-dimensional material is selected as Molybdenum disulfide. USE - Non-shielding tri-gate transistor device for a resistance-type full swing amplitude inverter (claimed). ADVANTAGE - The top gate controls transistor device initial doping so as to accurately control the threshold voltage position and obtain the full swing amplitude attribute of an inverter circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a non-shielding tri-gate transistor device set with a same size top gate and bottom gate in a channel region.