▎ 摘　　要

NOVELTY - Low temperature post-curing transfer of single-layer germanium-based graphene comprises spin-coating carrier material on the surface of the germanium-based graphene grown by the chemical vapour deposition process, and placing three-layer composite structure in a container with the carrier material facing up, pouring mixture of uncured polydimethylsiloxane and multi-layer graphene exfoliated by bubble method into the low-temperature post-curing process, etching germanium sheet (2) on the three-layer composite structure and triggering and heating to realize the planarization of the three-layer composite structure. USE - Low temperature post-curing transfer of single-layer germanium-based graphene ADVANTAGE - The method involves performing germanium based graphene su low temperature post-curing to construct flexible target substrate, the large area, high quality single layer germanium-based graphene is effectively transferred, constructing three-layer structure system, which not only can ensure the graphene and PMMA interface, PMMA and PDMS interface has enough interface adhesion energy, it also can avoid the high temperature after curing process caused by PMMA forming gradient interface layer, so as to construct graphene/PMMA/multi-layer graphene-PDMS 3-layer system, and preparing a single scale, unstable mode controllable graphene conformal pleated pattern. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene conformal pleated structure prepared by the above method. DESCRIPTION OF DRAWING(S) - The drawing shows a process flow chart of low temperature post-curing transfer of single-layer germanium-based graphene. Graphene layer (1) Germanium sheet (2) Poly(methyl methacrylate) layer (3) Culture dish (4) Culture dish (5) Uncured multi-layer graphene-polydimethylsiloxane (6) Curing multi-layer graphene-polydimethylsiloxane (7) Culture dish (8) Hydrogen fluoride:hydrogen peroxide:water etching solution (9)