▎ 摘　　要

NOVELTY - Reduced graphene oxide film is prepared by suspending graphite oxide to deionized water under ultrasonic condition, performing low speed centrifugation, taking the supernatant, drying, and grinding to obtain graphene oxide; adding the graphene oxide to a solvent and dispersing under ultrasonic condition for 0.5-1.5 hours; subjecting dispersion liquid to micropore filter film vacuum filtration, and drying obtained filter cake to obtain graphene oxide film; and performing high temperature thermal reduction or hydroiodic acid (HI) reduction of graphene oxide film. USE - Method of preparing reduced graphene oxide film (claimed) used in microelectronics device. ADVANTAGE - The method is simple and can obtain reduced graphene oxide thin film having high thermal conductivity. The film is not prone to breakage and has large surface area. DETAILED DESCRIPTION - Preparation of reduced graphene oxide film comprises: (A) adding graphite oxide to deionized water and suspending under ultrasonic condition for 10 minutes to 1 hour, performing low speed centrifugation at 2000-3200 revolutions/minute for 5-14 minutes, taking the supernatant, drying, and grinding to obtain graphene oxide; (B) adding the graphene oxide to a solvent and dispersing under ultrasonic condition for 0.5-1.5 hours, and controlling concentration of graphene oxide dispersion liquid to 5 mg/mL; (C) subjecting dispersion liquid to micropore filter film vacuum filtration, and drying obtained filter cake to obtain graphene oxide film; and (D) performing high temperature thermal reduction or hydroiodic acid (HI) reduction of graphene oxide film.