▎ 摘　　要

NOVELTY - The photodetector has a gate dielectric layer (18) placed on a bilayer graphene layer (15). An antenna top gate is placed on the dielectric layer, where the top gate and dielectric layer amplify absorption of incident light in the graphene layer by resonant surface mode coupling. A conductive back gate (12) is placed on a backside of and insulated from the graphene layer for applying electric field with the top gate across the graphene layer to tune bandgap. The dielectric layer is placed between a source (16) and a drain (17) that are placed on the graphene layer for forming a dual-gated FET. USE - Resonant sub-wavelength antenna enhanced bilayer graphene tunable photodetector. ADVANTAGE - The photodetector facilitates dynamic real-time tunability so as to enable multi-color operation and flexibility to optimize based upon differing operational imperatives. The photodetector can be operated with reduced cooling requirements since graphene devices exhibit very low noise characteristics, and combines bilayer graphene in a resonant antenna structure to enhance infrared absorption to specific degree proportional to increase in electric field enhancement in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a tunable photodetector in which a semi-insulating silicon carbide wafer is ion implanted beneath a contact and electrically contacted using a reflective backplane for an antenna. Conductive back gate (12) Bilayer graphene layer (15) Source (16) Drain (17) Gate dielectric layer (18)