• 专利标题:   Manufacturing nitrogen-doped graphene involves preparing base grapheme, and irradiating base graphene with ultraviolet rays under nitrogen atmosphere at ambient temperature.
  • 专利号:   KR2018109014-A
  • 发明人:   PARK J
  • 专利权人:   ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C01B032/182
  • 专利详细信息:   KR2018109014-A 05 Oct 2018 C01B-032/182 201871 Pages: 11
  • 申请详细信息:   KR2018109014-A KR037911 24 Mar 2017
  • 优先权号:   KR037911

▎ 摘  要

NOVELTY - Manufacturing nitrogen-doped graphene involves preparing a base grapheme, and irradiating the base graphene with ultraviolet rays under a nitrogen atmosphere at ambient temperature. USE - Method for manufacturing nitrogen-doped graphene (claimed). ADVANTAGE - The method enables to easily control electrical characteristic of the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view of irradiating the base graphene with ultraviolet light. Nitrogen-doped graphene (10) Ultraviolet irradiator (DV) Substrate (SB) Ultraviolet light (UV)