▎ 摘　　要

NOVELTY - The method involves preparing nitride monocrystal growth substrate. A graphene layer is formed on the substrate. A nitride single crystal layer is formed on the graphene layer. The substrate is chemically processed using etchant to remove the graphene layer. The etchant is selected from hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, acetic acid or acetone. The substrate is made of material selected from aluminum oxide, gallium nitride, silicon carbide or silicon. USE - Manufacturing method of nitride single crystal used in fabrication of nitride compound semiconductor luminance device (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of fabricating nitride compound semiconductor luminance device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating manufacturing process of nitride single crystal. (Drawing includes non-English language text)