• 专利标题:   Graphene and silicon nanowires based raman amplifier for complementary metal-oxide-semiconductor device, comprises substrate, insulating layer, silicon-based nanowire, insulator silicon, first silicon-based coupler and barrier layer.
  • 专利号:   CN110147023-A, CN110147023-B
  • 发明人:   YOU J, LUO Y, JIANG T, ZHENG X, YIN K, ZHANG J, YANG J, WANG Z, YU Y
  • 专利权人:   PLA ACAD MILITARY MEDICAL NAT DEFENSE
  • 国际专利分类:   G02F001/39, H01S003/30
  • 专利详细信息:   CN110147023-A 20 Aug 2019 G02F-001/39 201973 Pages: 14 Chinese
  • 申请详细信息:   CN110147023-A CN10521193 17 Jun 2019
  • 优先权号:   CN10521193

▎ 摘  要

NOVELTY - A graphene and silicon nanowires based raman amplifier comprises substrate, insulating layer, silicon-based nanowire, insulator silicon, first silicon-based coupler, second silicon-based coupler, barrier layer and graphene layer, where the insulating layer is dispersed on the substrate, one-dimensional silicon-based nanowires is dispersed on the insulating layer, insulator silicon is dispersed on both ends of the silicon-based nanowires, the silicon-based coupler dispersed in the insulator silicon at one end of the silicon-based nanowire, second silicon-based coupler is dispersed in the insulator silicon at the other end of the silicon-based nanowire, the isolation layer covers the silicon-based nanowire, the insulator silicon and the exposed insulating layer, and the graphene layer covers the isolation layer, the pump light and signal light transmitted to the raman amplifier is transmitted by first silicon-based coupler and transmitted by second silicon-based coupler. USE - Graphene and silicon nanowires based raman amplifier for complementary metal-oxide-semiconductor device. DETAILED DESCRIPTION - A graphene and silicon nanowires based raman amplifier comprises substrate, insulating layer, silicon-based nanowire, insulator silicon, first silicon-based coupler, second silicon-based coupler, barrier layer and graphene layer, where the insulating layer is dispersed on the substrate, one-dimensional silicon-based nanowires is dispersed on the insulating layer, insulator silicon is dispersed on both ends of the silicon-based nanowires, the silicon-based coupler dispersed in the insulator silicon at one end of the silicon-based nanowire, second silicon-based coupler is dispersed in the insulator silicon at the other end of the silicon-based nanowire, the isolation layer covers the silicon-based nanowire, the insulator silicon and the exposed insulating layer, and the graphene layer covers the isolation layer, the pump light and signal light transmitted to the raman amplifier is transmitted by first silicon-based coupler and transmitted by second silicon-based coupler, the raman amplification effect of the signal light transmitted by the silicon-based nanowires is enhanced by the coupling of the surface plasmons of the graphene layer and the optical waveguide mode of the silicon-based nanowires. INDEPENDENT CLAIMS are also included for the following: (1) a method for preparing graphene and silicon nanowires based raman amplifier (2) a complementary metal-oxide-semiconductor device, comprises graphene and silicon nanowires based raman amplifier.