▎ 摘　　要

NOVELTY - Long channel narrow band gap semiconductor transistor comprises a substrate (101), where the substrate is provided with a high-k buried oxide layer (102). The high k buried oxides are provided with narrow-band gap semiconducting semiconductor channel layer (103). The narrow-band gaps semiconductor channels are provided on both sides of the narrow band channel layer. A gate structure (103) is provided on the narrow band channel layer, and the gate structure includes two side walls (104) and is located on the side walls. The gate dielectric layer (105) and a gate between 104' and 104' are provided between the two sides of a gate structure has a source electrode and a drain electrode (108). USE - Narrow band gap semiconductor transistor i.e. carbon nano-tube field effect transistor, for use in an electronic industry, silicon-based complementary metal-oxide-semiconductor (CMOS) device. ADVANTAGE - The transistor optimizes the semiconductor transistor by adjusting the energy band of the leakage end, so as to inhibit the off-state current and static energy consumption, and can be compatible with the industrial semiconductor process, can realize large scale integration preparation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of long channel narrow gap semiconductor transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of a long-channel narrow-gap semiconductor transistor (Drawing includes non-English language text). Buried oxide layer (101) Hafnium oxide buried oxide layer (102) Narrow band gap semiconductor channel layer (103) Side walls (104) Gate dielectric layer (105) Source (106) Source electrode (107) Drain electrode (108)