▎ 摘 要
NOVELTY - The device has a substrate (11) provided with a processing area (110). A processing platform (112) is connected with a processing area, where the processing area is an oxygen-free area. A heating mechanism (20) is fixed in the processing area to heat a copper-graphene stack (80) at 500 degrees centigrade to 900 degrees centigrade. The lifting head (12) is connected with the processing area. The lifting head is provided with a hot press stroke that moves towards the processing platform to heat press the copper-graphene stack into an integrated structure. A transmission component (17) is detachably connected with the lifting head. USE - Lifting head processing copper-graphene device. ADVANTAGE - The device has high conductivity and excellent mechanical property. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a lifting head processing copper-graphene device. Substrate (11) Lifting head (12) Transmission member (17) Heating mechanism (20) Copper-graphene stack (80) Processing area (110) Processing platform (112)