▎ 摘　　要

NOVELTY - The interconnect structure (200) has a first contact feature (2000) provided in a first dielectric layer (210). A second dielectric layer (216) is provided over the first dielectric layer. A third dielectric layer is provided over the second dielectric layer. A second contact feature is extended through the second dielectric layer and the third dielectric layer. A graphene layer is provided between the second contact feature and the third dielectric layer. USE - Interconnect structure for IC device e.g. transistor. ADVANTAGE - Reduces size and cost of semiconductor device. Allows graphene barrier layer to protect second contact feature against oxygen from first dielectric layer and second dielectric layer. DESCRIPTION OF DRAWING(S) - The drawing shows the fragmentary cross-sectional view of an interconnect structure. Semiconductor device (20) Interconnect structure (200) First dielectric layer (210) Second dielectric layer (216) First contact feature (2000)