• 专利标题:   Reaction chamber for scale preparation device of chemical vapor deposition (CVD) deposited graphene, has discharge bur line that is connected with cathode, and is provided with three air inlets respectively carbon-derived gas inlet.
  • 专利号:   CN215249591-U
  • 发明人:   SUN H
  • 专利权人:   SUN H
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN215249591-U 21 Dec 2021 C01B-032/186 202215 Chinese
  • 申请详细信息:   CN215249591-U CN20245953 28 Jan 2021
  • 优先权号:   CN20245953

▎ 摘  要

NOVELTY - The utility model claims a graphene preparing device technology field, especially relates to a reaction chamber and scale preparation device of CVD deposited graphene. the reaction chamber is a cavity with an opening at the bottom, and the two opposite side plates of the reaction chamber are provided with a groove structure, the groove structure is covered on the upper part of the conveyor belt assembly. A groove structure is set on the side plate opposite to the reaction chamber, which can make the reaction chamber cross on the conveyor belt assembly. In this way, the gap between the conveyor belt assembly and the reaction chamber can be reduced. so as to reduce the loss of heat in the reaction chamber, and the conveying belt assembly drives the movement of the substrate, the reaction chamber can deposit graphene on scale on the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a scale preparation device of CVD deposited graphene.