▎ 摘　　要

NOVELTY - Preparation of exfoliated near-free graphene comprises providing a metal substrate; placing the substrate in the high temperature area of a double-temperature area chemical vapor deposition tubular furnace; vacuumizing and performing temperature gradient annealing under the high-purity argon gas and high-purity hydrogen atmosphere; keeping hydrogen and argon gas flow rate, introducing carbon source gas, raising temperature, keeping temperature for 30-240 minutes to proceed graphene growth, and quickly cooling to room temperature; putting into tubular furnace, placing sulfur source in low temperature area quartz boat; heating to 400-800 degrees C and 100-400 degrees C, vulcanizing, and keeping temperatures for 1-30 minutes; and closing all the gas and naturally cooling under the inert atmosphere after pumping. USE - The method is used for preparing exfoliated near-free graphene. ADVANTAGE - The method weakens the coupling effect of graphene and the substrate, realizes decoupling of graphene on the metal substrate, and promotes graphene to be easily peeled from the substrate.