▎ 摘　　要

NOVELTY - The process comprises depositing hologenated aromatic molecules on a monocrystalline or polycrystalline substrate under ultra high vacuum, polymerizing the hologenated aromatic molecules by thermally treating or heating the substrate at a temperature of 200-350 degrees C, by exposing the substrate to a light beam and/or by electron bombardment, and detaching graphene sheets from the substrate by etching the sheets in a strong acid solution. The deposition step is carried out at a pressure of less than 10-9 mbar, and is carried out by thermal evaporation at a temperature of 100-350 degrees C. USE - The process is useful for fabricating graphene sheets, which are useful in the field of nanoelectronics to form basic components of electronics such as transistors. ADVANTAGE - The process is capable of simply and economically fabricating the graphene sheets with excellent mechanical properties thus enhancing the operation efficiency of the transistors. DETAILED DESCRIPTION - The process comprises depositing hologenated aromatic molecules on a monocrystalline or polycrystalline substrate under ultra high vacuum, polymerizing the hologenated aromatic molecules by thermally treating or heating the substrate at a temperature of 200-350 degrees C, by exposing the substrate to a light beam and/or by electron bombardment, and detaching graphene sheets from the substrate by etching the sheets in a strong acid solution. The deposition step is carried out at a pressure of less than 10-9 mbar, and is carried out by thermal evaporation at a temperature of 100-350 degrees C. The substrate has a specific orientation of (100), (111) or (110), and is a metal, semiconductor or insulator substrate.