• 专利标题:   Silicon-based photoelectrode used as photoanode for photoelectrochemical water splitting and oxygen evolution, comprises silicon layer and dielectric passivation layer, an electrocatalyst layer and porous graphene layer arranged sequentially on surface of silicon layer.
  • 专利号:   CN115679367-A
  • 发明人:   GONG J, XIE G
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   C25B001/04, C25B001/55, C25B011/059, C25B011/091
  • 专利详细信息:   CN115679367-A 03 Feb 2023 C25B-011/091 202319 Chinese
  • 申请详细信息:   CN115679367-A CN11352012 31 Oct 2022
  • 优先权号:   CN11352012

▎ 摘  要

NOVELTY - Silicon-based photoelectrode comprises a silicon layer and a dielectric passivation layer, an electrocatalyst layer and a porous graphene layer arranged sequentially on the surface of the silicon layer. The protective layer is a polymer resin layer, preferably, the polymer resin includes polymethylmethacrylate and/or polydimethylsiloxane. USE - The silicon-based photoelectrode is used as a photoanode for photoelectrochemical water splitting and oxygen evolution (claimed). ADVANTAGE - The method enables to prepare silicon-based light electrode that improves the intrinsic catalytic activity of the electrocatalyst, and the interface charge transmission and mass transfer process in the catalytic reaction process is adjusted synergistically, and improves the photoelectric chemical decomposition water oxygen evolution performance of the silicon based light electrode. The method is simple and controllable, and has good application potential. The dielectric passivation layer is uniform and compact and the electro catalyst layer is also compact. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation method of the silicon-based light electrode.