• 专利标题:   Method for manufacturing electronic device, involves forming electrode on substrate, and performing post-treatment using benzoic acid on substrate on which electrode is formed.
  • 专利号:   KR2021112128-A, KR2379726-B1
  • 发明人:   KIM T H, SEUNG K H, KIM D H, PARK C
  • 专利权人:   UNIV HANYANG IUCFHYU
  • 国际专利分类:   H01B001/12, H01B013/00, H01B005/14, H01L051/56
  • 专利详细信息:   KR2021112128-A 14 Sep 2021 H01B-013/00 202180 Pages: 20
  • 申请详细信息:   KR2021112128-A KR027294 04 Mar 2020
  • 优先权号:   KR027294

▎ 摘  要

NOVELTY - The method involves forming an electrode on a substrate. The post-treatment is performed using benzoic acid on the substrate on which the electrode is formed. The post-treatment is performed using a solution in which the solvent of benzoic acid and solvent of dimethyl sulfoxide (DMSO), ethylene glycol (EG), methanol (MeOH) and ethylalcohol (EtOH) are mixed. The substrate is included with glass, polydimethylsiloane (PDMS), polyethlene naphthalate (PEN), polyethersulfone (PES), and polyimide (PI). The poly styrenesulfonate (PSS) electrodes are silver (Ag) nanowires, single layer carbon nanotube (SCNT), multilayer carbon nanotube (MCNT), discrete carbon nanotube (DCNT), boron nitride (BN), molybdenum disulfide (MoS2), bis(tellanylidene) molybdenum (MoTe2), tungsten telluride (WTe2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), tungsten diselenide (WSe2). The PSS electrodes are formed by mixing with material of graphene and graphene oxide. USE - Method for manufacturing electronic device. ADVANTAGE - The conductivity of the electrode is improved without damaging the substrate through the post-treatment using benzoic acid. The electronic device is manufactured with high conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining change in state of substrate.