▎ 摘　　要

NOVELTY - The device (1) has a lower structure (6) formed on a substrate (3). A pattern layer includes a plate portion and a via portion. A graphene-like carbon material layer is in contact with the via portion and a first wiring structure (21). Gate layers (59) are stacked in a vertical direction perpendicular to an upper surface of the substrate and spaced apart from each other. A memory vertical structure penetrates through the gate layers in the vertical direction. The lower structure includes first and second wiring structures. A lower insulating structure covers the wiring structures. The via portion includes a polysilicon layer. USE - Semiconductor device i.e. NAND flash memory device. ADVANTAGE - The semiconductor device has high performance, high speed, and/or multifunctionality has increased, the integration of semiconductor devices has increased. The reliability of the memory vertical structure is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device. Semiconductor device (1) Substrate (3) Lower structure (6) Wiring structure (21) Gate layers (59)