• 专利标题:   Continuously preparing powder graphene comprises e.g. adding matrix material into growth chamber, forming growth matrix, reacting growth gas with growth matrix, expanding grapheme, separating grapheme, storing and discharging.
  • 专利号:   CN113277500-A
  • 发明人:   JIN H, CHANG B, ZHOU Z, WANG Z
  • 专利权人:   CHANGZHOU 2D CARBON GRAPHENE MATERIAL CO
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN113277500-A 20 Aug 2021 C01B-032/184 202174 Pages: 10 Chinese
  • 申请详细信息:   CN113277500-A CN10500622 08 May 2021
  • 优先权号:   CN10500622

▎ 摘  要

NOVELTY - Continuously preparing powder graphene comprises adding matrix material into a growth chamber, where growth chamber is in a closed heating device, the heating device is evacuated and an inert gas is introduced into it to normal pressure; (ii) forming the growth matrix is formed, when the matrix material is completely melted and introducing growth gas and inert gas into the growth matrix; (iii) expanding the graphene into a flat structure and spreading out on the surface of the growth substrate due to the pressure change when the bubble reaches the surface of the growth substrate of graphene and blowing the exhaust gas generated by the reaction are blown to the powder collection device under the action of the airflow; and (v) separating graphene by the powder collection device and storing and allowing waste gas enter the exhaust gas treatment device and discharging after the treatment reaches the standard. USE - The method is useful for continuously preparing powder graphene. ADVANTAGE - The method ensures the growth rate and the blowing rate can be balanced, so as to achieve continuous and controllable growth and stable quality of the output graphene; controls size of the graphene sheet; and achieves industrialized mass production. DETAILED DESCRIPTION - Continuously preparing powder graphene comprises adding matrix material into a growth chamber, where growth chamber is in a closed heating device, the heating device is evacuated and an inert gas is introduced into it to normal pressure, and the growth chamber is heated under the protection of the inert gas to growth temperature; (ii) forming the growth matrix, when the matrix material is completely melted, introducing growth gas and inert gas into the growth matrix, allowing the gas enter the growth matrix to generate bubbles and form a gas cavity, reacting growth gas with the growth matrix and decomposes rapidly at high temperature and then generating graphene on the wall of the gas cavity; (iii) expanding the graphene into a flat structure and spreading out on the surface of the growth substrate due to the pressure change when the bubble reaches the surface of the growth substrate the graphene and blowing the exhaust gas generated by the reaction are blown to the powder collection device under the action of the airflow; and (v) separating graphene by the powder collection device and storing and allowing waste gas enter the exhaust gas treatment device and discharging after the treatment reaches the standard. An INDEPENDENT CLAIM is also included for graphene, prepared as mentioned above, where the sheet diameter is 10 mu m to 1 cm.