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  • 专利标题:   Stripping graphene thin film involves utilizing surface graphene thin film with substrate, growing graphene film directly on substrate or epitaxially growing material, and peeling off epitaxial material to obtain desired product.
  • 专利号:   CN104099662-A
  • 发明人:   DUAN R, LI J, SUN L, WANG G, WANG J, WEI T, ZHAO Y
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   C23C016/01, C30B025/18
  • 专利详细信息:   CN104099662-A 15 Oct 2014 C30B-025/18 201503 Pages: 5 Chinese
  • 申请详细信息:   CN104099662-A CN10332170 11 Jul 2014
  • 优先权号:   CN10332170

▎ 摘　　要

NOVELTY - Stripping involves utilizing surface graphene thin film with a substrate, where the graphene film layer number is more than 2. The graphene film is directly grown on a substrate or epitaxially growing material. The epitaxial material is peeled off, and then the obtained material is transfered between the graphene thin film and the substrate. USE - Method for stripping graphene thin film (claimed). ADVANTAGE - The method is simple and utilizes graphene thin film in convenient manner.