▎ 摘　　要

NOVELTY - Integrated circuit structure of DRAM memory comprises a pole (112); a first disk electrode (123) surrounding and in contact with a first portion of the pole; a second disk electrode (121) surrounding and in contact with a second portion of the pole, the second disk electrode over and spaced apart from the first disk electrode; a dielectric layer (105) surrounding and continuous between the first disk electrode and the second disk electrode, the dielectric layer along the pole between the first disk electrode and the second disk electrode; and an electrode layer surrounding the dielectric layer, the electrode layer along the pole between the first disk electrode and the second disk electrode. USE - The integrated circuit structure is useful for computing device (claimed). ADVANTAGE - The semiconductor device has high power density, good performance, and long maintenance-free lifetime. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a computing device. DESCRIPTION OF DRAWING(S) - The drawings show schematic view of semiconductor device. Dielectric layer (105) Interface layer (107) Pole (112) Second electrode (121) First electrode (123)