▎ 摘　　要

NOVELTY - A nitrogen-doped graphene is prepared by ultrasonically cleaning silicon piece surface containing silicon dioxide using ethanol, acetone, and deionized water, placing powder-shaped aromatic hydrocarbon small molecule in crucible, thermal evaporating, vapor-depositing to silicon dioxide to form precursor layer, evaporating and depositing copper on precursor layer surface, placing sample in tube-type furnace containing argon gas, annealing under copper layer catalytic action to obtain graphene layer, soaking silicon piece in etching solution, flushing with deionized water, and drying. USE - Preparation of nitrogen-doped graphene (claimed). ADVANTAGE - The preparation directly grows graphene on substrate through high temperature annealing and etching, avoids transfer operation, and reduces growing temperature of graphite and energy consumption. DETAILED DESCRIPTION - A nitrogen-doped graphene is prepared by ultrasonically cleaning silicon piece surface containing 300 nm-thick silicon dioxide using ethanol, acetone, and deionized water, placing powder-shaped aromatic hydrocarbon small molecule in crucible, thermal evaporating, vapor-depositing to silicon dioxide to form precursor layer in which aromatic hydrocarbon small molecule is 9,10-bis(2-naphthyl) anthracene, or pentacene, evaporating and depositing copper on precursor layer surface to form copper layer, placing sample in tube-type furnace containing argon gas at 200 sccm and 10 mtorr holding pressure, high temperature annealing at 600-1000 degrees C under copper layer catalytic action for 15 minutes to obtain graphene layer, soaking silicon piece in etching solution for 10 minutes to remove copper layer catalyst, flushing with deionized water thrice, and drying at 60 degrees C in which etching solution contains 1 g copper sulfate, 50 ml hydrochloric acid, and 50 ml water. DESCRIPTION OF DRAWING(S) - The drawing shows a Raman spectrum graph of different copper layer thickness growing out of graphene.