▎ 摘　　要

NOVELTY - The device (100) has an insulating film that is provided above a semiconductor substrate (1), and containing a wiring trench. A catalyst layer (12) is provided directly or through another structure on side and bottom surfaces of the wiring trench. A graphene layer (13) is provided in the wiring trench so as to be along the side and bottom surface of the wiring trench. The graphene layer is provided on the catalyst layer so as to be in contact with the catalyst layer. USE - Semiconductor device. ADVANTAGE - The graphene layer is provided in wiring trench so as to be along side and bottom surface of trench, and is provided on catalyst layer so as to be in contact with catalyst layer. Hence the graphene layer does not have an end surface and also continues on the upper surface of the wiring without any breaks and there is no electron scattering at the end surface of the graphene, and the wiring resistance is reduced. As it is possible to leave the graphene layer formed on the protective film at the same time, the number of processes can be reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Semiconductor substrate (1) Catalyst layer (2) Wiring layer insulating film (5) Graphene layer (13) Semiconductor device (100)