▎ 摘　　要

NOVELTY - Chemically-sensitive field effect transistor (T1) having multi-layered structure for performing sequencing reaction involving the sequencing of strands of nucleic acids, the field effect transistor, comprises: e.g. substrate layer having extended body; first insulating layer positioned above the extended body of substrate layer; second insulating layer positioned above first insulating layer; source electrode and drain electrode each having top surface and bottom surface, where the top surface separated from bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes are disposed within the first insulating layer, the source electrode is separated from the drain electrode by distance; and graphene layer positioned between first insulating layer and second insulating layer and extending between outer side portion of the source electrode and the outer side portion of the drain electrode. USE - The chemically-sensitive field effect transistor is useful for: performing sequencing reaction involving the sequencing of strands of nucleic acids, the field effect transistor (claimed); analyzing biological and/or chemical materials, such as for molecular, e.g. nucleic acid, analysis and/or sequencing; and performing bioinformatics analysis. ADVANTAGE - The chemically-sensitive field effect transistor increases measurement sensitivity and accuracy, and at the same time facilitates significantly small pixel sizes and dense GFET sensor based arrays. DETAILED DESCRIPTION - Chemically-sensitive field effect transistor (T1) having a multi-layered structure for performing a sequencing reaction involving the sequencing of strands of nucleic acids, the field effect transistor, comprises: a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; a source electrode and a drain electrode each having a top surface and a bottom surface, where the top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes are disposed within the first insulating layer, the source electrode is separated from the drain electrode by a distance; and a graphene layer positioned between the first insulating layer and second insulating layer and extending between the outer side portion of the source electrode and the outer side portion of the drain electrode thus forming a channel between the source electrode and drain electrode, the graphene layer contacting the top surface of the source electrode and drain electrode. INDEPENDENT CLAIMS are also included for: (1) a chemically-sensitive field effect transistor (T2) having a multi-layered structure for performing a biological reaction involving at least one of a deoxyribonucleic acid, a ribonucleic nucleic acid, and a protein, the field effect transistor comprising a substrate layer having an extended body, a first insulating layer positioned above the extended body of the substrate layer, a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode separated from the drain electrode by a distance, a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes, a graphene layer positioned between the first and second insulating layers and extending between the source and drain electrodes thus forming a channel between the source electrode and drain electrode; and (2) a chemically-sensitive field effect transistor (T3) having a multi-layered structure for performing a biological reaction involving fluidic reagents, the field effect transistor comprising a substrate layer having an extended body, a first insulating layer positioned above the extended body of the substrate layer, a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode and the drain electrode are separated by a distance, a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes, a graphene layer positioned between the first and second insulating layers and substantially extending between an outer side portion of the drain electrode and an outer side portion of the source electrode to form a channel between the source and drain electrodes.