▎ 摘　　要

NOVELTY - The semiconductor structure has a semiconductor substrate (10) with a single crystalline silicon-containing semiconductor material and a semiconductor carbide layer (50) on semiconductor substrate with thickness less than 10 nm. A graphene layer (60,62) has a number of graphene monolayers and abutting the semiconductor carbide layer, the number is within predetermined value. The graphene layer has a (0001) crystalline orientation along a surface normal of a top surface of said semiconductor substrate. USE - Semiconductor structure used for semiconductor devices. ADVANTAGE - A commensurate single crystalline semiconductor carbide growth mode directly on the semiconductor crystal of the semiconductor substrate is maintained within each semiconductor carbide layer. The temperature of the first anneal is selected to enable complete epitaxial alignment of the semiconductor carbide layers with the single crystalline structure of the semiconductor substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the vertical cross-sectional view of the semiconductor structure after conversion of top portions of the at least one semiconductor carbide layer into at least one graphene layer through a second anneal. Semiconductor substrate (10) Dielectric material portions (12) Dielectric material portion (32) Semiconductor carbide layer (50) Graphene layer (60,62)