▎ 摘　　要

NOVELTY - A reduced graphene-semiconductor room temperature nitrogen dioxide-based temperature sensor is prepared by uniformly stirring graphite and sodium nitrate in concentrated sulfuric acid under ice bath condition, adding potassium permanganate, uniformly stirring under ice bath condition, transferring into constant temperature water bath pot, adding deionized water, controlling temperature to 90-100 degrees C, adding deionized water, adding hydrogen peroxide solution and hydrochloric acid to obtain oxidized graphene, and centrifugally washing to prepare neutral suspension. USE - Method for preparing reduced graphene-semiconductor room temperature nitrogen dioxide-based temperature sensor (claimed). ADVANTAGE - The method has low working temperature and fast response and recovery speed, reduces service life of sensor, and increases safety risk detection, uses reduced graphene to have large specific surface area, very fast electron transfer speed and good light resistance. DETAILED DESCRIPTION - A reduced graphene-semiconductor room temperature nitrogen dioxide-based temperature sensor is prepared by: (A) uniformly stirring graphite and sodium nitrate in concentrated sulfuric acid under ice bath condition, adding potassium permanganate, uniformly stirring under ice bath condition, transferring into constant temperature water bath pot, adding deionized water, controlling temperature to 90-100 degrees C, adding deionized water, adding hydrogen peroxide solution and hydrochloric acid to obtain oxidized graphene, and centrifugally washing to prepare neutral suspension; (B) weighing inorganic salt powder including zinc nitrate and tungsten chloride, dissolving in deionized water or organic solvent, using magnetic stirrer or other stirring device to obtain uniform solution, adding urea and neutral suspension, using high speed mixer or other mixing device to obtain uniform mixture, transferring into stainless steel high pressure kettle of Teflon (RTM: PTFE) substrate, washing with water and ethanol, and drying to obtain powder; and (C) using alumina or surface oxidation treated silicon monocrystalline silicon piece as insulating substrate, screen printing, sputtering, evaporation or spraying to prepare interdigital electrode and terminal, powder screen printing, sputtering, and vapor evaporating, chemical vapor depositing, laser pulse depositing, or thermal spraying over interdigital electrode.