▎ 摘　　要

NOVELTY - The non-optoelectronic apparatus has a transport structure (T) comprises a layer made of graphene with a thickness in the atomic scale. The drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure. A control unit includes a voltage generator. A signal extraction unit is configured to extract a required electric signal from an output electric signal generated at a channel created in the transport structure between the drain and source electrodes upon a change in conductance occurs in the transport structure. A source drain bias is applied to the source and drain electrodes of the non-optoelectronic graphene based sensing device. The conductivity of the graphene layer is modulated at a frequency and contains a component at a frequency when the change in conductance occurs in the transport structure. USE - Non-optoelectronic graphene sensing device for use in optoelectronic apparatus and applications such as light sensing, light detection and ranging laser imaging detection and ranging systems and single pixel photodetectors. ADVANTAGE - The photodetector based on a transport structure comprising 2D materials and a photosensitizing structure configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure benefits, as they enable detection of lower light levels, reducing the noise equivalent irradiance or noise equivalent power of the detector or sensors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for suppressing noise for a non-optoelectronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the device of the optoelectronic apparatus and includes the device and an electronic connection scheme. Drain (D) Source (S) Transport structure (T)