▎ 摘　　要

NOVELTY - Pre-processing method performed before growing graphene on catalyst metal layer formed on to-be-processed product by chemical vapor deposition method involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to the catalyst metal layer. USE - Pre-processing method of catalyst metal layer during formation of graphene (claimed) used for low-resistance semiconductor wiring material and channel material for spintronic device. ADVANTAGE - The high-quality graphene having high crystallinity is efficiently grown at reduced temperature. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) formation of graphene, which involves activating the catalyst metal layer and growing graphene on catalyst metal layer formed on to-be-processed product by chemical vapor deposition method; and (2) graphene manufacturing apparatus, which has processing container (1) whose opened upper portion processes to-be-processed product, mounting base which mounts to-be-processed product within the processing container, dielectric material board which plugs up opening portion of the processing container, flat antenna (33) which has microwave radiation holes (33a) which are provided at outer side of the dielectric material board, and introduces microwave to the processing container, gas-introducing portion which has gas emission holes provided facing the to-be-processed product mounted on the mounting base, and introduces process gas in the processing container, and exhaust port connected to the exhaust apparatus which carries out evacuation inside the processing container. The gas-introducing portion is connected to gas supply source which supplies process gas containing reducible gas used for pre-processing method, and source gas supply source which supplies the source gas of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the processing apparatus used for pre-processing method. (Drawing includes non-English language text) Processing container (1) Microwave introducing portion (5) Gas supply section (7) Flat antenna (33) Microwave radiation hole (33a)