▎ 摘　　要

NOVELTY - The photoelectrode has a graphene layer located on a surface of a semiconductor layer. The semiconductor layer is formed with gallium nitride group alloy. The gallium nitride group alloy is located on a surface of a substrate. The gallium nitride group alloy comprises indium nitride-gallium nitride group alloy, aluminum nitirde-gallium nitride group alloy, gallium arsenic nitride- gallium nitride group alloy, gallium phosphorus- gallium nitride group alloy, indium gallium nitride-gallium nitride group alloy and aluminum gallium nitride-gallium nitride group alloy. USE - Photoelectrode for a photoelectrochemistry cell (claimed). ADVANTAGE - The photoelectrode improves sunlight hydrogen energy conversion efficiency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a photoelectrochemistry cell (2) a photoelectrode manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a photoelectrode.