• 专利标题:   Producing graphene atomic layer etched graphene, comprises providing self-assembled monolayer mask on surface the graphene having at least one layer, and irradiating energy sources on the graphene for etching.
  • 专利号:   KR2016111048-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016111048-A 26 Sep 2016 C01B-031/04 201677 Pages: 14
  • 申请详细信息:   KR2016111048-A KR035666 16 Mar 2015
  • 优先权号:   KR035666

▎ 摘  要

NOVELTY - Producing graphene atomic layer etched graphene, comprises (a) providing self-assembled monolayer mask on surface the graphene having at least one layer, and (b) irradiating energy sources on the graphene for etching. USE - The graphene is useful for producing electronic component (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene produced by the above method.