• 专利标题:   Preparation of graphite/graphite pattern used in FET, by spin-coating photoresist onto substrate, thermally treating photoresist pattern to form graphite layer, and performing vapor deposition to form graphene-containing layer.
  • 专利号:   CN103011140-A, CN103011140-B
  • 发明人:   WANG X, ZHANG Z, GUO Y
  • 专利权人:   UNIV TONGJI
  • 国际专利分类:   C01B031/04, G03F007/00
  • 专利详细信息:   CN103011140-A 03 Apr 2013 C01B-031/04 201363 Pages: 13 Chinese
  • 申请详细信息:   CN103011140-A CN10519884 07 Dec 2012
  • 优先权号:   CN10519884

▎ 摘  要

NOVELTY - Graphite/graphite pattern is prepared using photoresist by spin-coating a photoresist onto a substrate support to obtain photoresist pattern; thermally treating the photoresist pattern in anaerobic environment at not less than 750 degrees C to form a graphite layer, at the same time, performing vapor deposition on the entire substrate to form a graphene-containing layer; forming a protective pattern on the sample of photoresist resist layer for shielding; etching graphene layer exposed to outside region; and removing the photoresist layer to form a graphene/graphite pattern. USE - Method of preparing graphite/graphite pattern (claimed) used in FET. ADVANTAGE - The method does not need catalyst and utilizes substrate that can be directly formed with graphene/graphite pattern. Further, the method is simple, low in cost and suitable for large scale.