▎ 摘　　要

NOVELTY - Graphite/graphite pattern is prepared using photoresist by spin-coating a photoresist onto a substrate support to obtain photoresist pattern; thermally treating the photoresist pattern in anaerobic environment at not less than 750 degrees C to form a graphite layer, at the same time, performing vapor deposition on the entire substrate to form a graphene-containing layer; forming a protective pattern on the sample of photoresist resist layer for shielding; etching graphene layer exposed to outside region; and removing the photoresist layer to form a graphene/graphite pattern. USE - Method of preparing graphite/graphite pattern (claimed) used in FET. ADVANTAGE - The method does not need catalyst and utilizes substrate that can be directly formed with graphene/graphite pattern. Further, the method is simple, low in cost and suitable for large scale.