▎ 摘　　要

NOVELTY - Producing doped graphene, comprises either (S10) forming a carbon donor layer including a dopant on a substrate, (S11) forming a protective layer on the carbon donor layer, and (S20) heating the carbon donor layer; or (a) forming a carbon donor layer on a substrate using combined mixture of a dopant and carbon source including carbon and polymer, and (b) heating the carbon donor layer. USE - The method is useful for producing doped graphene (claimed). ADVANTAGE - The method produces doped graphene directly without process of doping, adjusts desired band gap of graphene by adjusting amounts of carbon and carbon supply source, and improves conductivity of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for doped graphene produced by the above method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flowchart of the method for producing doped graphene (Drawing includes non-English language text). Carbon donor layer forming step (S10) Protective layer forming step (S11) Carbon donor layer heating step (S20)