▎ 摘　　要

NOVELTY - The FET has a substrate formed with a graphene channel layer. A source electrode and a drain electrode are coated with 3D printing that is formed by a graphite alkenyl source. The graphene channel layer is composed of semiconductor graphene, preferably boron and nitrogen-doped graphene. The source electrode and the drain electrode are coated with graphene ink, slurry, conductive ink, metal copper, silver and gold. The 3D printing is coated with a gate dielectric layer. A grid electrode is coated with graphene conductive paste. USE - 3D printing technology based Graphite alkenyl FET. ADVANTAGE - The FET is easy to operate and environment-friendly, and avoids schottky barrier so as to reduce contact resistance in an effective manner and requires less energy consumption and less manufacturing cost. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a 3D printing technology based graphite alkenyl FET.