▎ 摘　　要

NOVELTY - The method involves forming a graphene buffer layer on a substrate e.g copper foil, polycrystalline or amorphous substrate, where the graphene buffer layer is formed by chemical vapor deposition using methane as carbon source. An aluminum nitride layer is formed on the graphene buffer layer. The copper foil is fixed in a quartz tube placed in a resistance furnace. The quartz tube is sealed and heated at 930-1100 degrees Celsius for 60 to 100 min. Intake flow rate of argon gas is measured as 150 to 200 mL/min for 10 to 30 min. Copper foil high temperature pre-heating process is performed. A growth layer number of the graphene buffer layer is obtained. USE - LED epitaxial growth graphene buffer layer forming method. ADVANTAGE - The method enables effectively avoiding problem of a large area gallium nitride epitaxial layer formation so as to reduce substrate removing difficulty. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an LED epitaxial growth graphene buffer layer.