▎ 摘　　要

NOVELTY - The method involves forming graphene oxide layer (1) on upper surface of silicon substrate (2) through stripping transfer machine. The needle tip pulse voltage mode vacancy defects formed on artificial graphene structure (3) are detected using atomic force microscope. Anisotropic etching process is performed on artificial graphene structure using hydrogen-containing plasma. USE - Method for processing graphene super-lattice nanometer structure, using atom force microscope. ADVANTAGE - The graphene super-lattice nanometer structure can be processed effectively by performing anisotropic etching process on artificial graphene structure using hydrogen-containing plasma. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the processing of super-lattice nanometer structure. Graphene oxide layer (1) Silicon substrate (2) Artificial graphene structure (3) Lead (7) Needle tip (8)