▎ 摘　　要

NOVELTY - The transistor has a source (1), a drain (2), a channel, a gate oxide layer and a gate electrode. The channel is located between the source and the drain and is made of graphene nanoribbons. The channel has a near-source N-type heavily doped region (41), a near-source N-type gradient doped region (42), an intrinsic graphene nano-ribbon (43), a near-drain N-type gradient doped region (44), a near-drain N-type heavily doped region (45). A gate (3) has a near-source gate (31), a near-drain gate (32), and a middle segment gate. The near source and drain gates are located on the source and drain sides. The middle segment gate is located between the near source and drain gates. The near-source gate, the near-drain gate, and the middle gate are filled with the metal materials. The work functions of the metal materials of the near source gate, the middle gate and the near drain gate are M1, M2, and M3. A gate oxide layer is located between the gate and the intrinsic graphene nanoribbon. USE - Graphene tunneling effect transistor with gradient doped heterogeneous material gate structure. ADVANTAGE - The graphene tunneling effect transistor with gradient doped heterogeneous material gate structure has a lower leakage current and subthreshold swing, and a larger switching current ratio. The gradient doped region in the channel can weaken the electric field in the channel such that the gate capacitance is reduced and the cutoff frequency is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene tunneling effect transistor. Source (1) Drain (2) Gate (3) Near-source gate (31) Near-drain gate (32) Near-source N-type heavily doped region (41) Near-source N-type gradient doped region (42) Intrinsic graphene nano-ribbon (43) Near-drain N-type gradient doped region (44) Near-drain N-type heavily doped region (45)