• 专利标题:   Multi-wavelength surface plasmon thermo-electron photo diode detector, has vanadium dioxide micro-nano structure, graphene layer and top drive electrode that are connected together, and two sides of two-dimensional material layer provided with metal source electrode and metal drain electrode.
  • 专利号:   CN116207171-A
  • 发明人:   WEN C, WANG G, JIANG H, WU J
  • 专利权人:   UNIV DONGHUA
  • 国际专利分类:   H01L031/032, H01L031/0352, H01L031/112
  • 专利详细信息:   CN116207171-A 02 Jun 2023 H01L-031/032 202355 Chinese
  • 申请详细信息:   CN116207171-A CN10117715 15 Feb 2023
  • 优先权号:   CN10117715

▎ 摘  要

NOVELTY - The detector has a substrate (1), a two-dimensional material layer (2), a vanadium dioxide micro-nano structure (4), a graphene layer (5) and a top layer driving electrode (6) connected together. The two sides of the two-dimensional material layer are respectively provided with a metal source electrode (31) and a metal drain electrode (32). The substrate is provided with a silicon dioxide, where the thickness of silicon dioxide is in specific nanometer on the heavily doped silicon substrate, the sapphire and the polyethylene terephthalate, the material of the two-dimensional material layer includes graphene, transition metal chalcogenide, black phosphorus and the thickness of the two-dimensional material layer is in specific nanometer and the length is in specific microns. USE - Multi-wavelength surface plasmon thermo-electron photo diode detector for use in electronics and optoelectronics field and safety, medical and commercial civil fields. ADVANTAGE - The detector obviously improves the detection performance, but also has wide spectrum, real-time tuning, room temperature work and wavelength characteristics. The detector solves the problem that the detection wavelength of the traditional noble metal surface plasmon detector is passively tuned, after combining with the two-dimensional material, has room-temperature work, band selectivity, high response rate and fast response speed. By designing the energy band contact the vanadium dioxide and two-dimensional material, can perform efficient charge transfer, combines the gate voltage control to realize high gain, and inhibits the dark noise of the device, so the device can realize ultra-sensitive detection, high gain and high sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing multi-wavelength photodiode detector. DESCRIPTION OF DRAWING(S) - The drawing shows a main view of a multi-wavelength surface plasmon thermo-electron photo diode detector. 1Substrate 2Two-dimensional material layer 4Vanadium dioxide micro-nano structure 5Graphene layer 6Top layer driving electrode 31Metal source electrode 32Metal drain electrode