• 专利标题:   Manufacture of metal-doped oxidized graphene used as intermediate for manufacturing capacitor, involves adding graphite to sulfuric acid, sulfonating, adding nitric acid, performing laser ablation and adding hydrochloric acid.
  • 专利号:   JP5357346-B1, JP2014136653-A, TW201427898-A, TW474975-B1
  • 发明人:   ISAWA K, KOYANAGI M, MAKINO T, SHIBUYA A, IZAWA K
  • 专利权人:   MICC TEC CO LTD, MICC TEC CO LTD
  • 国际专利分类:   C01B031/02, C01B031/04
  • 专利详细信息:   JP5357346-B1 04 Dec 2013 C01B-031/02 201401 Pages: 16 Japanese
  • 申请详细信息:   JP5357346-B1 JP004180 15 Jan 2013
  • 优先权号:   JP004180

▎ 摘  要

NOVELTY - Graphite is added to reaction medium comprising 90-98 %mass sulfuric acid, metal or metal oxide and sulfonation reaction is carried out in presence of solid acid catalyst. 60-98 %mass nitric acid and oxidant are added to sulfonated graphite, stirred and laser ablation is carried out, to obtain suspension. Water and 25-40 %mass hydrochloric acid is added to obtained suspension and hydrolyzed to obtain metal-doped oxidized graphene. USE - Manufacture of metal-doped oxidized graphene used as intermediate for manufacturing capacitor. ADVANTAGE - The method provides metal-doped oxidized graphene having excellent electroconductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of metal non-doped reduced-type oxidized graphene, which involves heating oxidized graphene at 100-400 degrees C.