▎ 摘　　要

NOVELTY - A graphene quantum dot reinforced metal oxide supercapacitor electrode material preparing method involves ultrasonically cleaning the current collector material with hydrochloric acid solution, acetone and absolute ethanol to obtain the collected current collector material and hydrothermally depositing nickel oxide, cobalt trioxide or molybdenum trioxide on the surface of the current collector material after cleaning to obtain a metal oxide current collector material. The metal oxide current collector material is placed in a plasma enhanced chemical vapor deposition vacuum device and hydrogen gas is introduced after vacuuming. Carbon dioxide gas is passed to the vacuum device, the carbon dioxide gas and argon gas are stopped and the plasma chemical vapor deposition is performed. The vacuum apparatus is evacuated and cooled to room temperature under vacuum to obtain a graphene quantum dot reinforced metal oxide supercapacitor electrode material. USE - Method for preparing graphene quantum dot reinforced metal oxide supercapacitor electrode material. ADVANTAGE - The method enables solving the problem of lower electrical conductivity and lower specific surface area of metal oxides in existing supercapacitors, which resulting in deterioration of performance. DETAILED DESCRIPTION - A graphene quantum dot reinforced metal oxide supercapacitor electrode material preparing method involves ultrasonically cleaning the current collector material with hydrochloric acid solution, acetone and absolute ethanol for 1-5 minutes to obtain the collected current collector material, where the concentration of the hydrochloric acid solution is 1-3 mol/liter, and hydrothermally depositing nickel oxide, cobalt trioxide or molybdenum trioxide on the surface of the current collector material after cleaning to obtain a metal oxide current collector material. The metal oxide current collector material is placed in a plasma enhanced chemical vapor deposition vacuum device and hydrogen gas is introduced after vacuuming that the hydrogen gas flow rate is adjusted to 10-100 sccm, and argon gas is introduced and the argon gas flow rate is adjusted to 10-100sccm, where the plasma pressure chemical vapor deposition vacuum device has a pressure of 100-1000Pa and the temperature is raised to 200-1000 degrees C. Carbon dioxide gas is passed to the vacuum device and adjusted the flow rate of carbon dioxide gas to 1-100sccm, adjusted the pressure in the plasma chemical vapor deposition vacuum device to 100-1000Pa under the condition of RF power of 20-500W, the temperature of 200-1000 degrees C and the radio frequency of 1-20 min, and the power is turned off after the end of the radio frequency, the carbon dioxide gas and argon gas are stopped and the plasma chemical vapor deposition is performed. The vacuum apparatus is evacuated and cooled to room temperature under vacuum to obtain a graphene quantum dot reinforced metal oxide supercapacitor electrode material.