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  • 专利标题:   Preparation of boron-doped graphene involves using boron-doped silicon carbide prepared by thermal decomposition method at high temperature.
  • 专利号:   CN103613092-A, CN103613092-B
  • 发明人:   CHEN L, CHEN X, GUO L, GUO Y, JIA Y, LI Z, LU W, WANG G, WANG W
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103613092-A 05 Mar 2014 C01B-031/04 201429 Pages: 9 Chinese
  • 申请详细信息:   CN103613092-A CN10556311 11 Nov 2013
  • 优先权号:   CN10556311

▎ 摘　　要

NOVELTY - Preparation of boron-doped graphene involves using boron-doped silicon carbide prepared by thermal decomposition method at high temperature. USE - Preparation of boron-doped graphene (claimed). ADVANTAGE - The boron-doped graphene having high integrity is safely prepared by simple method.