• 专利标题:   Single-crystal passivated emitter and rear contact (PERC) solar cell based on composite trapping structure, has metal nano-particle layer that is orderly laminated with front electrode layer, silicon oxide film layer, and silicon nitride film layer.
  • 专利号:   CN113903824-A
  • 发明人:   XU X, HE F
  • 专利权人:   JIANGSU JINGWANG NEW ENERGY TECHNOLOGY
  • 国际专利分类:   B82Y020/00, B82Y030/00, H01L031/0216, H01L031/0352, H01L031/077
  • 专利详细信息:   CN113903824-A 07 Jan 2022 H01L-031/077 202218 Chinese
  • 申请详细信息:   CN113903824-A CN10577841 22 Jun 2020
  • 优先权号:   CN10577841

▎ 摘  要

NOVELTY - The solar cell has a silicon sheet (1) and a composite trapping structure that is located on the surface of the silicon sheet. The structure includes a metal nano-particle layer (2) which is sequentially laminated with a front electrode layer (3), a silicon oxide film layer (4), a SiNx film layer, a P-I-N layer (6), a graphene/titanium dioxide nano particle layer (7), a back reflecting layer (8), and a back electrode layer. The back electrode layer is welded with an anode wiring (13) and a cathode wiring (14), where the front electrode layer is provided with a first laser etching line (10) uniformly spaced. USE - Single-crystal passivated emitter and rear contact (PERC) solar cell based on composite trapping structure. ADVANTAGE - The single-crystal PERC solar cell is featured with excellent solar light absorption efficiency, short circuit current of the battery, stability of the charge stored in the medium layer, and good passivation effect on the single crystal silicon solar cell. The graphene/titanium dioxide nano-particle layer of graphene and one-dimensional nano material is featured with excellent electronic transmission, and can quickly separate the electron and hole, inhibiting the generation of dark current. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the single-crystal PERC solar cell based on composite trapping structure. Silicon wafer (1) Metal nano-particle layer (2) Front electrode layer (3) Film layer (4) Sinx film layer (5) P-I-N layer (6) Graphene/titanium dioxide nano-particle layer (7) Back reflection layer (8) Back electrode layer (9) First laser line (10) Second laser line (11) Anode wiring (13) Cathode wiring (14)