▎ 摘　　要

NOVELTY - Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises (1) polishing and cleaning the copper foil, heating, (ii) introducing the copper foil after the pre-oxidation treatment in step (i) in a quartz boat, introducing the quartz boat in the CVD furnace tube, and the CVD furnace tube is evacuated, pass inert gas, heating CVD furnace tube in an inert atmosphere; (iii) keep the inert gas flow rate constant, subjecting copper foil to gradient annealing with hydrogen gas, (iv) maintaining inert gas, unchanging hydrogen flow, introducing methane to grow graphene in multiple stages, growning single-layer single-crystal graphene on the surface of a copper foil substrate with a copper oxide dielectric layer; (v) after graphene growth is over, stop feeding methane and hydrogen, heating and naturally cooling graphene to room temperature under an inert atmosphere. USE - The method is useful for growing single-layer single-crystal graphene ADVANTAGE - The method reduces the graphene nucleation density, accelerates the growth speed; obviously inhibiting graphene second layer nucleation, convenient jumbo size the single layer single crystal graphene growth. DETAILED DESCRIPTION - Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises (1) polishing and cleaning the copper foil, heating, (ii) introducing the copper foil after the pre-oxidation treatment in step (i) in a quartz boat, introducing the quartz boat in the CVD furnace tube, and the CVD furnace tube is evacuated, continuously pass inert gas, heating CVD furnace tube to a temperature of 950-1050degrees Celsius in an inert atmosphere; (iii) keep the inert gas flow rate constant, subjecting copper foil to gradient annealing with hydrogen gas, and the number of grain boundaries in the copper foil is reduced, where copper foil substrate changes from a polycrystalline structure to an oriented Cu(111) single crystal structure, during the annealing process, under the action of hydrogen, a copper (I) oxide dielectric layer is formed on the surface of the copper foil substrate, a copper foil substrate carrying a copper (I) oxide dielectric layer is obtained; (iv) maintaining inert gas, unchanging hydrogen flow, introducing methane to grow graphene in multiple stages, growning single-layer single-crystal graphene on the surface of a copper foil substrate with a copper oxide dielectric layer; (v) after graphene growth is over, stop feeding methane and hydrogen, heating and naturally cooling graphene to room temperature under an inert atmosphere.