▎ 摘　　要

NOVELTY - Forming a graphene layer (130) directly on a substrate (410) comprising a single crystalline sapphire substrate or a single crystalline silicon carbide substrate, comprises depositing carbon atoms that form the graphene layer on a top surface (21) of the substrate. USE - The method is useful for forming a graphene layer directly on a substrate which is used in a structure (claimed). ADVANTAGE - The method provides graphene layer which are utilized in devices that are manufactured at a low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a structure comprising a graphene layer located on a single crystalline sapphire substrate. DESCRIPTION OF DRAWING(S) - The figure shows a vertical cross-sectional view of the structure. Top surface (21) Graphene layer (130) Single crystalline semiconductor-carbon alloy layer (320) Substrate (410)