▎ 摘　　要

NOVELTY - The model has a carrier path that is made of hydrogen-passivated armchair GNR heterojunction. A channel made of 3p dimmer armchair GNR, where p is integer number greater than 3, a source and a drain made of same type 3p+2 dimmer armchair GNR. The two electrodes are made of material similar to source and drain, and connected to two ends of source and drain. The two doping gate at left/right sides of the device are sandwiched between the source and drain portion of the GNR path. A control gate is formed in the middle of the device, and sandwiched between the channel portions of the GNR path. The gates are made of two layers comprising copper in the top layer e.g. metallic gate region (3) and diamond in the bottom layer e.g. dielectric region (4). The doping gates at source and drain are applied with opposite voltages and the control gate is applied with a voltage of 1.5 V to +1.5 V. The transistor is functioned as a power switch with a large on/off current ratio of 1015. USE - Energy-efficient transistor model for power switch application such as power electronics and computer chip. ADVANTAGE - The transistor size is scaled down continuously. By using GNR, te transistor is chemically and mechanically stable and does not require an additional encapsulation outside the materials. The structure of the transistor is simplified and easily fabricated. DESCRIPTION OF DRAWING(S) - The drawings show the top view and side view of the transistor model. Electrode made of 11-dimmer armchair GNR (1) Electrode extension made of 11-dimmer armchair GNR (2) Metallic gate region white made of copper (3) Dielectric region pink made of diamond (4) Dimmer-9 armchair GNR (5)