▎ 摘　　要

NOVELTY - The method involves placing washed silicon substrates in a reaction chamber. The layer of thick silicon dioxide is settled on surface of silicon carbide sample wafer, and photoresist is coated on mask surface, for etching window with substrate. The generated double-layer carbon film is placed into the buffered hydrofluoric acid solution to remove all silicon dioxide of the window, for placing the double-layer carbon film wafer free of the silicon dioxide onto the copper film. The copper film is removed from the double-layer structural graphene. USE - Method for preparing structural graphene used for manufacturing microelectronic device, based on copper film annealing. ADVANTAGE - The smooth surface, continuity, efficiency, yield and quality of the double-layer structural graphene can be improved. The porosity of the double-layer structural graphene can be reduced. DETAILED DESCRIPTION - The flow of the silane and the gaseous hydrocarbon is 15-35 ml/min and 30-70 ml/min respectively. The buffered hydrofluoric acid solution is made of hydrofluoric acid and water in the proportion of 1: 10. The thickness of the copper film is 250-300 nm. DESCRIPTION OF DRAWING(S) - The drawing shows the flow diagram illustrating the process for preparing structural graphene based on copper film annealing. (Drawing includes non-English language text)