• 专利标题:   X-ray analysis method for extreme super-thin graphene, involves irradiating X-ray in inside of chamber in which graphene sample is placed, and applying magnetism/electricity in inside of chamber by electromagnetic confirmation device.
  • 专利号:   KR1535455-B1
  • 发明人:   SEUNG H H
  • 专利权人:   KOREA INST CERAMIC ENG TECHNOLOGY
  • 国际专利分类:   G01N023/20, G01N023/207
  • 专利详细信息:   KR1535455-B1 13 Jul 2015 G01N-023/20 201552 Pages: 31
  • 申请详细信息:   KR1535455-B1 KR193316 30 Dec 2014
  • 优先权号:   KR193316

▎ 摘  要

NOVELTY - The method involves detecting the X ray penetrating inside the chamber in which graphene sample is placed. The X ray is irradiated in the inside of chamber using the irradiation equipment. The magnetism or electricity is applied in inside of chamber using electromagnetic confirmation device. The diffracted or reflected X-ray in inside of chamber is detected and analyzed. The X-ray irradiation angle and the exposure angle are set as predetermined value. The angle of diffraction of the peak center of the standard graphene crystal plane having specific Miller index, is set as preset value. USE - X-ray analysis method for extreme super-thin graphene. ADVANTAGE - The magnetism and electricity is applied in the thin film and the X-ray diffraction is performed. The physical property of material is analyzed easily. The X-ray analysis information and crystallographic information of the unknown graphene are known easily. The diversity and certainty of the graphene product are improved. The reliability and competitiveness of the finished product are improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the X-ray analysis equipment. (Drawing includes non-English language text)