• 专利标题:   Semiconductor device e.g. CPU, has heat dissipation unit fixed on semiconductor chip, and fin comprising graphene and arranged on semiconductor chip such that graphene is arranged in direction crossing surface of semiconductor chip.
  • 专利号:   US2017358517-A1, JP2017224686-A, CN107507810-A, US10008435-B2, HK1245999-A0
  • 发明人:   MATSUBARA Y
  • 专利权人:   RENESAS ELECTRONICS CORP, RENESAS ELECTRONICS CORP, RENESAS ELECTRONICS CORP
  • 国际专利分类:   H01L021/48, H01L023/00, H01L023/31, H01L023/367, H01L023/373, H05K007/20, H01L021/50, H01L000/00
  • 专利详细信息:   US2017358517-A1 14 Dec 2017 H01L-023/373 201801 Pages: 29 English
  • 申请详细信息:   US2017358517-A1 US480700 06 Apr 2017
  • 优先权号:   JP118243

▎ 摘  要

NOVELTY - The device has a heat dissipation unit fixed on a semiconductor chip (CH). The heat dissipation unit comprises a resin and a fin protruding from the resin. The fin comprises graphene and arranged on the semiconductor chip such that the graphene is arranged in a direction crossing a surface of the semiconductor chip. The heat dissipation unit includes a rolled body in which a graphite sheet (GF) and a resin tape (R1) are layered and rolled. A sealing resin is formed on the semiconductor chip. The heat dissipation unit is embedded in the sealing resin. USE - Semiconductor device such as CPU for use in a portable terminal. ADVANTAGE - The device increases operating speed of the CPU of a portable terminal, and an operating frequency leads to increasing an effective current in proportion to the frequency, thus increasing a heat generation amount. The device realizes efficient heat dissipation by improving exposed area of the fin by using forced-air cooling in combination and optimizing wind velocity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Bump electrodes (BP) Semiconductor chip (CH) Graphite sheet (GF) Conductive portions (M1, M2) Resin tape (R1) Substrate (S) Stud bumps (SB)