• 专利标题:   Graphene pattern formation method, involves forming bonding layer in stamped part in which pattern is formed, and removing part in contact with bonding layer from remaining part of graphene layer.
  • 专利号:   KR2011090397-A
  • 发明人:   AHN J H, HONG B H
  • 专利权人:   SAMSUNG TECHWIN CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI
  • 国际专利分类:   H01L021/027
  • 专利详细信息:   KR2011090397-A 10 Aug 2011 H01L-021/027 201167 Pages: 15
  • 申请详细信息:   KR2011090397-A KR010139 03 Feb 2010
  • 优先权号:   KR010139

▎ 摘  要

NOVELTY - The method involves forming a bonding layer in a stamped part in which a pattern is formed, where the bonding layer is in contact with a graphene layer. A part in contact with the bonding layer is separated from a remaining part of the graphene layer. The bonding layer is formed in an outer circumference of the stamped part. The stamped part is made of polydi polydimethylsiloxane, perfluropolyether (PFPE), tetrafluorethylen-perfluordimethyldioxol- fluorcopolymer, and PFPE- dimethacrylate (DMA). USE - Graphene pattern formation method. ADVANTAGE - The method prevents the residue from remaining in the graphene layer, and improves the conducting property and visible light property of the grapheme layer. The method simplifies the manufacturing process of the pattern. The manufacturing cost of the graphene pattern is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene pattern forming device including a stamp movable part. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a graphene pattern formation method. '(Drawing includes non-English language text)'