• 专利标题:   Method for fabricating topological semi-metal interconnect, involves forming dielectric layer between interconnects, and forming hermetic cap layer on top of one or more interconnect.
  • 专利号:   US2022157733-A1, WO2022105639-A1, IN202347032700-A, KR2023098202-A
  • 发明人:   NOGAMI T, NARAYANAN V, LANZILLO N A, CHEN C, RANJILO N A
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP, IBM CHINA CO LTD
  • 国际专利分类:   H01L021/3213, H01L021/768, H01L023/522, H01L023/528, H01L023/532, B01J013/18, C08F036/04, G11B007/243, H01L029/06, H04L041/12
  • 专利详细信息:   US2022157733-A1 19 May 2022 H01L-023/532 202248 English
  • 申请详细信息:   US2022157733-A1 US950453 17 Nov 2020
  • 优先权号:   US950453, KR715767

▎ 摘  要

NOVELTY - A topological semi-metal (704) layer is patterned to form interconnects. A dielectric layer (708) is formed between the interconnect (700). A hermetic dielectrics cap (710) layer is then formed on the top of the interconnection and the dielectric layer. USE - Method for fabricating a topological semi-metal interconnect of a semiconductor device (all claimed) i.e. back-end-of-line (BEOL) device, in electrical, electronic and computer fields. ADVANTAGE - The hermetic dielectric cap layer is formed on top of the one or more interconnects and the dielectrics layer, and hence enhances the electrical performance of the semiconductor device, and reduces the parasitic capacitance of the interconnect, and enhances the reliability of the back-end-of-line (BEOL) interconnect. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) semiconductor device; and (2) interconnect (700). DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the topological interconnect after additional fabrication processes. Topological interconnect (700) Dielectric (702) Topological semi-metal (704) Dielectric layer (708) Dielectric cap (710)