▎ 摘　　要

NOVELTY - A topological semi-metal (704) layer is patterned to form interconnects. A dielectric layer (708) is formed between the interconnect (700). A hermetic dielectrics cap (710) layer is then formed on the top of the interconnection and the dielectric layer. USE - Method for fabricating a topological semi-metal interconnect of a semiconductor device (all claimed) i.e. back-end-of-line (BEOL) device, in electrical, electronic and computer fields. ADVANTAGE - The hermetic dielectric cap layer is formed on top of the one or more interconnects and the dielectrics layer, and hence enhances the electrical performance of the semiconductor device, and reduces the parasitic capacitance of the interconnect, and enhances the reliability of the back-end-of-line (BEOL) interconnect. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) semiconductor device; and (2) interconnect (700). DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the topological interconnect after additional fabrication processes. Topological interconnect (700) Dielectric (702) Topological semi-metal (704) Dielectric layer (708) Dielectric cap (710)