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  • 专利标题:   Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.
  • 专利号:   CN104047060-A, CN104047060-B
  • 发明人:   LI T, LIANG C, WANG Y
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C30B031/08
  • 专利详细信息:   CN104047060-A 17 Sep 2014 C30B-031/08 201482 Pages: 10 Chinese
  • 申请详细信息:   CN104047060-A CN10080785 14 Mar 2013
  • 优先权号:   CN10080785

▎ 摘　　要

NOVELTY - Preparation of sulfur-doped graphene comprises placing graphene in a chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source at 500-1050 degrees C, and introducing hydrogen and inert gas atmosphere in a reaction chamber for cooling. USE - Method for the preparation of sulfur-doped (claimed). ADVANTAGE - The method is convenient, and can adjust sulfur source gas flow rate.